October 16

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Frontmatter -- Contents -- Review Article -- Impurity Precipitation in Alkali Halide Crystals -- Original Papers -- Effect of Interstitial Loop Formation on Creep Resistance of Aluminium -- Precise X-Ray Determination of Small Homogeneous Strains Applied to the Direct Measurement of Piezoelectric Constants -- On Some Defects in Thin Low Anisotropy Ferromagnetic Films -- On Non-Stationary Pinch in Electron-Hole Plasma -- The Role of Adsorption Layers in Exo-Electron Emission from Oxide Surfaces -- Experimental Investigation of Generation Spectrum by Three-Level Centres of Two Kinds -- Theory of Electron Emission into Dielectrics with Arbitrary Band Structure -- Superferromagnetism in Thin Gd and Od-Au Films -- Lattice Constants and Phase Transitions in Oriented MnBi Films -- Low-Temperature Migration of Silicon through Metal Films Importance of Silicon-Metal Interface -- Simultaneous Determination of Volume Trap Concentration and Interface Trap Density from C-Y Characteristics -- Rectification at the Metal-Selenium Interface -- Ionization Coefficient for Holes in Polycrystalline Selenium -- Solution Growth of Homogeneous GaxIn1-xP Alloys -- Non-Stoichiometric Vacancy Order in Vanadium Monoxide -- Elastic Limit and Peierls Forces in Tellurium Single Crystals -- Photon Emission from Sputtered Particles during Ion Bombardment -- Effect of the Formation of Stabilized and Movable Domain Walls on the Shape of Hysteresis Loops -- Small-Angle Scattering of Neutrons at Single-Domain Precipitations in a Cu-1%Co Single Crystal -- Neutron Small-Angle Scattering Study of the Transition from Single- to Multi-Domain Behaviour in Precipitations of Cu-1%Co -- Electron Microscope Investigations of the Synthesis of Halophosphate Phosphors -- Defects in Epitaxial Gallium Phosphide Layers -- The Heat Capacity of Lead from 300 to 850 K: Experimental Data -- Rare Gas Diffusion in Alkali Metal Iodides -- Space Group Selection Rules. A Comparison of Methods and Application to Fd3m -- Diffusion of Nickel in Alloys Based on the Intermetallic Compound Ni3Al(y') -- Equivalent Circuit Models in Semiconductor Transport for Thermal, Optical. Auger-Impact, and Tunnelling Recombination-Generation-Trapping Processes -- The Dependence of Hole Resonances in Si on the Wave Vector Component along the Direction of Magnetic Induction (I) -- The Combination of Auger Spectroscopy and Characteristic Loss Spectroscopy for the Elements Y to Co -- Annealing Behavior and Etching Phenomena of Microdefects in Dislocation-Free Float-Zone Silicon -- The Effect of Reactor Irradiation on the Electrical Properties of Amorphous Germanium -- Dependence of the Intensity of Spontaneous Emission from Electron-Beam-Excited Specimens of Impure GaAs on the Level of Excitation -- Voltage Characteristics of Planar Galvanomagnetic Effect in Thin Ferromagnetic Films -- The Time Dependence of Current Decay in Indium Antimonide due to the Amplification of Thermal Acoustic Waves -- Photoconductivity of Semi-Insulating GaAs(Cr) in High Electric Field -- Radiation-Enhanced Diffusion in Metals -- Short Notes -- Triboluminescence of Silicon Carbide and Other Uncommon Materials -- Linear Defects in Sub-Boundaries -- On the Maagnetic Transition in ZnxMn1-xFe2O4 Ferrites -- Electrical Resistance Peak in Superconducting Lead Films in a Perpendicular Magnetic Field -- Infrared Photovoltaic Radiation Detector with Tellurium Single Crystals -- Propriétés conductives électriques des couches minces d'oxyde de plomb synthétisé par pulvérisation cathodique réactive -- A New Electrical Switching in Liquid Se-Te Alloys -- Te-Concentration Dependence of the Emission Intensity of CdS;Te by Radioactive-Tracer Profile Technique -- Über Exoemission bei der Dehnung von Aluminium im Ultrahochvakuum -- Thermally Stimulated Exoelectron Emission (TSEE) Caused by Pressure Loads on BeO Ceramic -- Polymorphism of Cuprous Iodide at High Pressure -- Gunn Domains in Bulk GaAs Affected by Surface Conditions -- Thermoele