Advanced Power Rectifier Concepts

During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas.

Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation.

Provides extensive analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier Includes numerical simulation examples to explain the operating physics and validate the models Extensive coverage of the role of silicon carbide in the design and structure of power rectifiers Includes supplementary material: sn.pub/extras

Autorentext

Professor Jayant Baglia is a Distinguished Professor of Electrical Engineering at North Carolina State University and is an internationally recognized expert on power semiconductor devices. He is a Member of the National Academy of Engineering and a Fellow of the IEEE. He spent 15 years at the General Electric Research and Development Center, Schenectady, NY, leading their power device effort and was bestowed the highest scientific rank of Coolidge Fellow. Among his many NCSU honors, he was the recipient of the 1998 O. Max Gardner Award given by the North Carolina University Board of Governors to the one person within the 16 constituent universities who has made 'the greatest contribution to the welfare of the human race'.

Prof. Baliga has authored 12 books and over 500 scientific articles. He has been granted more than 100 U.S. Patents. The IEEE has recognized him numerous times - most recently with the 'Lamme Medal' at Whitehall Palace in London. Scientific American magazine included him among the 'Eight Heroes of the Semiconductor Revolution' when commemorating the 50th anniversary of the invention of the transistor.

Klappentext

Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices are developed. Results of numerical simulations are provided for additional insight into device physics and for validation of various analytical models.

Drawing upon years of practical experience and using numerous examples and illustrative designs, B. Jayant Baliga discusses:

Analytical formulations for design and analysis of structures such as the Junction Barrier controlled Schottky (JBS) Rectifier and the Merged PiN Schottky (MPS) Rectifier

Numerical simulations to explain the operating physics and validate the models

The role of silicon carbide in the structural design and development of power rectifiers

Advanced Power Rectifier Concepts will be of interest to practicing engineers in the power semiconductor community and can also serve as a reference for graduate students and faculty doing research in an academic environment. Selected sections of the book can be used as supplementary teaching material for courses taught using the textbook 'Fundamentals of Power Semiconductor Devices' by the author.

Inhalt
Schottky Rectifiers.- Junction Barrier Controlled Schottky Rectifiers.- Trench Schottky Barrier Controlled Schottky Rectifiers.- Trench MOS Barrier Controlled Schottky Rectifiers.- P-i-N Rectifiers.- MPS Rectifiers.- SSD Rectifiers.- Synopsis.