This book focuses on advanced optical spectroscopy techniques for the characterization of cutting-edge semiconductor materials. It covers a wide range of techniques such as Raman, infrared, photoluminescence, and cathodoluminescence (CL) spectroscopy, including an introduction to their physical fundamentals and best operating principles. Aimed at professionals working in the research and development of semiconductors and semiconductor materials, this book looks at a broad class of materials such as silicon and silicon dioxide, nano-diamond thin films, quantum dots, and gallium oxide. In addition to the spectroscopic techniques covered, this book features a chapter devoted to the use of a scanning electron transmission microscope as an excitation source for CL spectroscopy. Written by a practicing industry expert in the field, this book is an ideal source of reference and best-practices guide for physicists, as well as materials scientists and engineers involved in the area of spectroscopy of semiconductor materials. Further, this book introduces the cutting-edge spectroscopy such as optical photothermal IR and Raman spectroscopy or terahertz time-domain spectroscopy (THz-TDS) etc.

Auteur

Dr. Masanobu Yoshikawa completed his doctorate in applied spectroscopy with the Fourier transform infrared (FT-IR) and Raman spectroscopy at the Osaka University in 1986. After his analytical study of the one-dimensionally conducting metal-tetracyanoquinodimethanide (M-TCNQ) with FT-IR and Raman spectroscopy at the Osaka University, he joined Toray Research Center, Inc. in 1986, which is a leading analytical service company in Japan. He has mainly studied wide-gap semiconductors such as diamond, gallium nitride, silicon carbide, using FT-IR, Raman, and cathodoluminescence. He worked for Fraunhofer-Institute in Freiburg in Germany for 6 months in 1998. Furthermore, he has served as the Japanese national project leader for development of the world-first scanning near field Raman spectroscopy (SNOM) from 2003 to 2007, entrusted by New Energy and Industrial Technology Development Organization (NEDO) in Japan and succeeded in stress characterization of Si devices with a spatial resolution of less than 100 nm. As a result, he was awarded the Advance Analytical Instrument Development prize from the Japan Society for Analytical Chemistry (JAIMA) in 2010. He is working for Toray Research Center, Inc. as a senior vice-president and a senior fellow.