Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications

Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems.
After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrating that these compounds are the simplest ternary analogs of II-VI zincblende compounds. Chapter 5 discusses the spontaneous luminescence, stimulated emission and laser action, and light-emitting diodes employing ternary chalcopyrite compounds. Chapter 6 discusses some of the fundamental principles of nonlinear optical interactions and the properties of the chalcopyrite crystals. This text also highlights the nonlinear optical devices available. Chapter 7 describes the electrical properties of chalcopyrite crystals, whereas the concluding chapter deals with the other physical properties of these compounds, such as lattice vibrational spectra, optical activity, and linear thermal expansion.
This book is of great value to researchers and workers in the semiconductor field.

Contenu

Acknowledgments

Editors Preface

Chapter 1 Introduction

References

Chapter 2 The Chalcopyrite Structure and Crystal Growth

2.1 The Chalcopyrite Structure

2.2 Phase Transitions in Chalcopyrite Crystals

2.3 Tetrahedrally Coordinated Compounds with More Than Three Components

2.4 Dissociation Pressures of Chalcopyrite Compounds

2.5 Phase Relationships in I-III-VI Systems

2.5.1 The Cu2Se-Ga2Se3 System

2.5.2 The Ag2Se-Ga2Se3 System

2.5.3 The Ag2Se-In2Se3 System

2.5.4 The Cu2Te-Ga2Te3 System

2.5.5 The Ag2Te-Ga2Te3 System

2.6 Phase Relationships in Mixed I-III-VI2 Systems

2.7 Phase Relationships in (I-III-VI22)-(II-VI) and (I-III-VI2)-(III-V) Systems

2.8 Phase Relationships in II-IV-V Systems

2.8.1 The Zn-Ge-P System

2.8.2 The Zn-Ge-As System

2.8.3 The Zn-Sn-As System

2.8.4 The Zn-Sn-Sb System

2.8.5 The Cd-Ge-P System

2.8.6 The Cd-Ge-As System

2.8.7 The Cd-Sn-P System

2.8.8 The Cd-Sn-As and Zn-Si-As Systems

2.9 Phase Relationships in Mixed II-IV-V Systems

2.10 Phase Relationships in Mixed (II-IV-V2)-(III-V) Systems

2.11 Crystal Growth, General Considerations

2.11.1. Growth of I-III-VI2 Crystals

2.11.2 Growth of Single Crystals of II-IV-V2 Compounds

2.11.3 Growth of Epitaxial Layers

2.12 Glass Formation in Chalcopyrite Systems

2.13 Effect of High Pressure and Temperature on Ternary Compounds

2.14 Mechanical Behavior of Chalcopyrite Compounds

References

Chapter 3 Electronic Structure of II-IV-V2 Compound

3.1 Theoretical Concepts

3.2 Lowest Direct Energy Gaps

3.2.1 Experimental Results

3.2.2 Quasicubic Model

3.2.3 Band Structure Near k = 0

3.3 Pseudodirect Energy Gaps

3.4 Optical Anisotropy of II-IV-V2 Compounds

3.4.1 CdSnP2

3.4.2 CdGeP2

3.5 Higher Lying Energy Gaps

References

Chapter 4 Electronic Structure of I-III-VI2 Semiconductors

4.1 Introduction

4.2 Experimental Results

4.2.1 Valence Band Structure

4.2.2 Temperature Dependence of the Direct Energy Gap

4.3 p-d Hybridization

4.4 Exciton Optical Properties

References

Chapter 5 Luminescence

5.1 Luminescence Spectra of II-IV-V2 Compounds

5.1.1 CdSnP2

5.1.2 CdSiAs2

5.1.3 ZnSiP2

5.1.4 Other II-IV-V2 Crystals

5.2 Luminescence Spectra of I-III-VI2 Compounds

5.2.1 AgInSe2 and CuInSe2

5.2.2 CuInS2 and CuGaS2

5.2.3 CuGaS2: I

5.2.4 AgGaS2 and AgGaSe2

5.3 Stimulated Emission Spectra of I-III-VI2 Compounds

5.4 CdSnP2-InP Heterodiodes

5.5 CdS-CuGaS2 Electroluminescent Diodes

References

Chapter 6 Nonlinear Optical Applications

6.1 Nonlinear Optical Phenomena

6.1.1 General Principles

6.1.2 Phase Matching in 42m Crystals

6.1.3 Physical Origin of Optical Properties

6.2 The Optical Parametric Oscillator

6.3 Phase-Matched Upconversion of 10.6 µ Radiation

6.4 Difference Frequency Generation of Submillimeter Waves

References

Chapter 7 Electrical Properties

7.1 Electrical Properties of II-IV-V2 Compounds

7.1.1 CdSnAs2

7.1.2 CdGeAs2

7.1.3 ZnSiAs2 and ZnGeP2

7.1.4 ZnSiP2

7.1.5 ZnSnP2 and ZnSnAs2

7.2 Band Parameters of II-IV-V2 Compounds

7.3 Electrical Properties of I-III-VI2 Compounds

7.3.1 Sulfides and Selenides-Annealing Characteristics

7.3.2 Sulfides and Selenides-Transport Measurements

7.3.3 Tellurides-Transport Measurements

7.3.4 Other Ternary Compounds

7.4 Glassy II-IV-V2 Compounds

7.4.1 CdGeAs2, CdGeP2, and CdSiAs2

7.4.2 Memory and Switching Devices

7.4.3 Thin-Film Devices

7.5 Current Oscillations

7.6 Thermoelectric Properties

References

Chapter 8 Miscellaneous Physical Properties

8.1 Lattice Vibrational Spectra

8.1.1 Infrared and Raman Spectra of ZnSiP2

8.1.2 Infrared Spectra of CuGaS2 and AgGaS2

8.1.3 Other Chalcopyrite Crystals

8.2 Optical Activity in AgGaS2

8.3 E.S.R. of Fe3+ in I-III-VI2 Crystals

8.4 N.M.R. of Cu63 and Ga69

8.5 Properties of Quaternary Alloys

8.5.1 Electrical Properties of CdSnAs2-InAs Solid Solutions

8.5.2 CdTe-AgInTe2 and CdTe-CuGaTe2 Solid Solutions

8.6 Linear Thermal Expansion of CdGeAs2

References

Appendix Tabulated Refractive Index Data

Index