Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors

The reference provides interdisciplinary discussion for diverse II-VI semiconductors with a wide range of topics. The third volume of a three volume set, the book provides an up-to-date account of the present status of multifunctional II-VI semiconductors, from fundamental science and processing to their applications as various sensors, biosensors, and radiation detectors, and based on them to formulate new goals for the further research. The chapters in this volume provide a comprehensive overview of the manufacture, parameters and principles of operation of these devices. The application of these devices in various fields such medicine, agriculture, food quality control, environment monitoring and others is also considered. The analysis carried out shows the great potential of II-VI semiconductor-based sensors and detectors for these applications.

• Considers solid-state radiation detectors based on semiconductors of II-VI group and their applications;
• Analyzes the advantages of II-VI compounds to develop chemical and optical gas and ion sensors; 
• Describes all types of biosensors based on II-VI semiconductors and gives examples of their use in various fields.

Doctor Hubilitate Ghenadii Korotcenkov has more than 50 years of research experience in the field of materials science and the development and research of various devices based on semiconductor materials. Until 1995 he studied Schottky barriers, MOS structures, native oxides, and various photoreceivers based on III-Vs compounds such as InP, GaP, AlGaAs, and InGaAs. His current research interests since 1995 include material sciences, focusing on metal oxide film deposition and characterization (In2O3, SnO2, ZnO, TiO2), surface science, thermoelectric conversion, and design of physical and chemical sensors, including thin film gas sensors. His scientific work has been recognized with numerous awards, including National Prize of the Republic of Moldova (2022), an Award of the Academy of Sciences of Moldova (2019), the Prize of the Presidents of the Ukrainian, Belarus, and Moldovan Academies of Sciences (2003) and others. G. Korotcenkov also received a fellowship from the International Research Exchange Board (IREX, United States, 1998), Brain Korea 21 Program (2008-2012), and BrainPool Program (Korea, 2007-2008 and 2015-2017).

 

 

Auteur

Doctor Hubilitate Ghenadii Korotcenkov has more than 50 years of research experience in the field of materials science and the development and research of various devices based on semiconductor materials. Until 1995 he studied Schottky barriers, MOS structures, native oxides, and various photoreceivers based on III-Vs compounds such as InP, GaP, AlGaAs, and InGaAs. His current research interests since 1995 include material sciences, focusing on metal oxide film deposition and characterization (In2O3, SnO2, ZnO, TiO2), surface science, thermoelectric conversion, and design of physical and chemical sensors, including thin film gas sensors. His scientific work has been recognized with numerous awards, including National Prize of the Republic of Moldova (2022), an Award of the Academy of Sciences of Moldova (2019), the Prize of the Presidents of the Ukrainian, Belarus, and Moldovan Academies of Sciences (2003) and others. G. Korotcenkov also received a fellowship from the International Research Exchange Board (IREX, United States, 1998), Brain Korea 21 Program (2008-2012), and BrainPool Program (Korea, 2007-2008 and 2015-2017).