Physical Chemistry of, in and on Silicon

The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every­ day experience, this choice being dictated merely by their greater knowl­ edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem­ istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem­ istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan­ tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.

Contenu

1. Silicon.- 1.1 Elemental Silicon.- 1.2 Silicon Metallurgy.- 1.3 Single-Crystal Growth.- 1.4 Mechanical Properties.- 1.4.1 Fracture Limit.- 1.4.2 Plastic Limit.- 2. Silicon Phases.- 2.1 Diamond-Cubic Silicon.- 2.2 Diamond-Hexagonal Silicon.- 2.3 Amorphous Silicon.- 2.3.1 Amorphous 1 (a1).- 2.3.2 Amorphous 0 (a0).- 3. Equilibrium Defects.- 3.1 Vacancies.- 3.2 Self-Interstitials.- 3.3 Vacancy-Self-Interstitial Pair.- 3.4 Stacking Faults.- 4. Impurities.- 4.1 Impurity Content.- 4.2 Oxygen.- 4.2.1 Thermal Donors.- 4.2.2 The New Thermal Donor.- 4.3 Oxygen Precipitates.- 5. Dopants.- 5.1 The Standard Theory.- 5.1.1 Electronic Properties.- 5.1.2 Equilibrium Properties.- 5.1.3 Transport Properties.- 5.2 Group V Donors.- 5.3 Group III Acceptors.- 5.3.1 Group III Acceptors as Shallow Centres.- 5.3.2 Group III Acceptors as Deep Centres.- 5.4 Generation-Recombination Phenomena.- 6. Defect-Impurity Interactions.- 6.1 Defect Influence on Impurities.- 6.2 Impurity Influence on Defects.- 6.3 Impurity-Impurity Interactions.- 7. The High Density Limit.- 7.1 Transition Metals.- 7.2 Substitutional Impurities.- 7.2.1 Clusters.- 7.2.2 Precipitation.- 7.3 General Correlations.- 7.3.1 Solubility and Segregation.- 7.3.2 Strain Entropy.- 8. Surfaces and Interfaces.- 8.1 Amorphous SÍO2.- 8.2 The Si-SiO2 Interface.- 8.3 Oxidation Kinetics.- 8.4 Surface Reconstructibility.- 9. Gettering.- 9.1 External Gettering.- 9.2 Internal Gettering.- 9.3 Heavy-Metal Gettering.- 9.4 Gettering and Device Processing Architecture.- 10.Device Processing.- 10.1 The MOS Structure.- 10.2 MOS Technology.- 10.3 A Look to the Future.- References.- Acronyms and Abbreviations.