Ultra-Low Power Wireless Technologies for Sensor Networks

Ultra-Low Power Wireless Technologies for Sensor Networks is written for academic and professional researchers designing communication systems for pervasive and low power applications. The main emphasis of the book is on design techniques for low power, highly integrated transceivers. Instead of presenting a single design perspective, this book presents the design philosophies from three diverse research groups, providing three completely different strategies for achieving similar goals. The following transceiver styles are represented:

• MEMS-assisted super-regenerative transceiver architecture

• Ultra-wideband transceiver architecture

• Low-IF CMOS transceiver architecture

The design of RF transceiver circuits and architectures is historically (and notoriously) heuristic. By presenting diverse perspectives on transceiver design, Ultra-Low Power Wireless Technologies for Sensor Networks prepares the reader for the countless design decisions they will be making in their own designs.

Ultra-Low Power Wireless Technologies for Sensor Networks also includes invited chapters: "Ultra-Low Power Radio in a Package Using Ultra-Wideband Technology" by Julien Ryckaert and Steven Sanders from Interuniversity Microelectronics Centre and "Low Energy Wireless Communication" by Ben Cook and Kris Pister from the University of California, Berkeley.

Résumé
transconductance e?ciency of all critical devices in order to reduce the n- essary bias current. However, reducing the current density also results in a severely decreased device f . An optimization of the current density is re- T quired to provide the correct balance between transconductance e?ciency and bandwidth. Plots such as Figure 2. 1 are useful tools for designers when choosing appropriate transistor bias points. Technology scaling allows greatly increased f realization for a given IC. Thus, weak inversion biasing for RF T design will become increasingly useful in future technology nodes. Throughout this work, the IC of critical transistors will be discussed. Most of the RF devices are biased in moderate to weak inversion to achieve enhanced transconductance e?ciency and reduced bias current. 2. 2 MEMS Background The relatively new ?eld of Radio Frequency Microelectro Mechanical Systems (RF MEMS) provides unique opportunities for RF transceiver designers. This section provides background on RF MEMS and provides insight into the - portunities presented by these new technologies. The ?eld of RF MEMS - cludes the design and utilization of RF ?lters, resonators, switches, and other passive mechanical structures constructed using bulk processed integrated c- cuit fabrication techniques. To date, these devices have been commercially used as discrete board-mounted components, primarily used to enhance the miniaturization of mobile phones. However, RF MEMS components have the potential to be batch fabricated using existing integrated circuit fabrication techniques.

Contenu
Wireless Sensor Networks.- Low Power CMOS Design for Radio Frequencies.- Two Channel Baw-Based Transceiver.- Super-Regenerative Receiver Design.- Fully Integrated Super-Regenerative Transceiver.- Integration Techniques.- Ultra-Low Power Radio in a Package Using Ultra-Wide Band Technology.- Low Energy Wireless Communication.- Conclusions.