Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that wasobtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.

Includes step-by-step analysis starting from growth, material study, device fabrication and characterizations Introduces the use of a new type of capping layer in the active region of quantum dot infrared detectors Discusses post-growth annealing treatment to improve optical and device performances

Auteur
Sourav Adhikary received the B.Sc. (Honors) degree in Physics from the Scottish Church College, University of Calcutta, Kolkata, India, and the M.Sc. degree in Applied Physics from the Indian School of Mines (Now IIT-ISM), Dhanbad, India, in 2008. He did his Ph.D in the Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, India in 2014. He has also worked as visiting scholar at CHTM, University of New Mexico, Albuquerque, USA for one year. After finishing PhD, he was working as research associate at IIT Bombay for six month, later he joined as post-doctoral fellow at Northwestern University, USA. He has published more than 20 international journals. His research interest includes In(Ga)As/GaAs and InAs/GaSb based materials and devices.

Subhananda Chakrabarti received his M.Sc. and Ph.D. degrees from the Department of Electronic Science, University of Calcutta, Kolkata, India in 1993 and 2000, respectively. He was a Lecturer in the Dept. of Physics, St. Xavier's College, Kolkata. He has been a Senior Research Fellow with the University of Michigan, Ann Arbor, from 2001 to 2005, a Senior Researcher with Dublin City University, Dublin City, Ireland, from 2005 to 2006, and a Senior Researcher (RA2) with the University of Glasgow, Glasgow, U.K., from 2006 to 2007. He joined as an Assistant Professor in the Department of Electrical Engineering, IIT Bombay, Mumbai, India, in 2007. Presently, he is a Professor in the same department. He is a Fellow of the Institution of Electrical and Telecommunication Engineers (IETE) India and also a Member of the IEEE, MRS USA, SPIE USA etc. He is the 2016 medal recipient of the Materials Research Society of India and was also awarded the 2016 NASI-Reliance Industries Platinum Jubilee Award for Application Oriented Innovations in Physical Sciences. He serves as an Editor of the IEEE Journal of Electron Device Society. He has authored more than 250 papers in international journals and conferences. He has also co-authored a couple of book chapters on intersubband quantum dot detectors. Dr. S. Chakrabarti serves as reviewer for a number of international journals of repute such as Applied Physics Letters, Nature Scientific Reports, IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics, Journal of Alloys and Compound, Material Research Bulletin etc. His research interests lie in compound (III-V and II-VI) semiconductor based optoelectronic materials and devices.

Contenu

Chapter 1: Introduction.- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots.- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties.- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping.- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics.- Chapter 6: Summary and Future Work. <p