Modeling of AlGaN/GaN High Electron Mobility Transistors

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.

Useful guide for those working the field of RF and power electronics Discusses the latest updated in the field of GaN HEMT modeling Highlights both theoretical and experimental aspects of GaN HEMTs

Auteur

Dr. D. Nirmal is a Full Professor in Electronics and communication Engineering and Associate Dean Engineering and Technology, Karunya Institute of Technology and sciences. He specialized in VLSI Design after his Bachelor of Engineering and received his Ph.D in Information and Communication Engineering from Anna University. His research interests includes Nanoelectronics, GaN Technology, Device and Circuit Simulation - GSL, Sensors, HEMT, Beyond 5G, Nanoscale device design and modelling. He is a founding chair of IEEE Electron Device Society Coimbatore chapter and Currently Region 10 IEEE EDS Vice chair and volunteered several committees in IEEE. He has funding project tune of 1.2 Cores from various agencies like DRDO(Defence Research and Development Organization), Ministry of Electronics and Information Technology, ISRO(Indian Space Research Organization) and AICTE(All India Council of Technical Education). He is a recipient of various awards namely IEI-Young Engineer award,IETE Smt. Manorama Rathore memorial award 2022 from IETE and Young Scientist Award 2019 from the Academy of Sciences. Prof.Nirmal has made more than 150+ peer reviewed research publications and three patents to his credits. He is also a Fellow of IETE and Senior IEEE member. He has delivered many Keynote talks, lectures in National and International Level conferences/Faculty Development programs.

Dr. J. Ajayan received his B.Tech Degree in Electronics and Communication Engineering from Kerala University in 2009, M.Tech, and Ph.D. Degree in Electronics and Communication Engineering from Karunya University, Coimbatore, INDIA, in 2012 and 2017 respectively. He is a Professor in the department of Electronics and Communication Engineering at SR University, Telangana, India. He has published more than 150 research articles in various journals and international conferences. Dr. Ajayan has three authored books, over 20 book chapters, and 3 patents to his credit. His areas of interest include microelectronics, semiconductor devices, nanotechnology, RF integrated circuits, and photovoltaics.

Contenu

Compact surface potential based algan/gan hemt models.- Physical Modelling of Charge Trapping Effects.- Recent Developments and Applications of High Electron Mobility Transistors.- Neural network based gan hemt modeling techniques.