Fundamentals of Power Semiconductor Devices

This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Provides extensive analytical formulations for design and analysis of structures

Includes numerical simulation examples to elucidate the operating physics and validate the models

Analyzes device performance attributes to allow practicing engineers in the industry to develop products

Presents a cohesive treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field

Contenu
Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.