3D Integration of Resistive Switching Memory

Auteur

Qing Luo received his Ph.D. from the Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing, China, in 2017. He is currently Professor at the Key Laboratory of Microelectronics Devices and Integrated Technology in IMECAS. His research interests are emerging memory devices including resistive RAM devices and ferroelectric memory devices.

Texte du rabat

This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures, to its applications.

Contenu

1. Introduction

Qing Luo

2.Associative Problems in Crossbar array and 3D architectures

Qing Luo

3. Selector Devices and Self-selective cells

Yaxin Ding, Qing Luo

4. Integration of 3D RRAM

Qing Luo

5. Reliability issues of the 3D Vertical RRAM

Tiancheng Gong, Dengyun Lei

6. Applications of 3D RRAM Beyond Storage

Xumeng Zhang, Xiaoxin Xu, Jianguo Yang

7. Conclusion

Qing Luo